Organic light emitting device, method of manufacturing the same, and shadow mask therefor

ABSTRACT

The present invention relates to an organic light emitting device, and the organic light emitting device according to an exemplary embodiment of the present invention includes a blue subpixel that is larger than a red subpixel and a green subpixel. The red subpixel and the green subpixel have the same layered structure such that the red subpixel and the green subpixel are formed by using the same shadow mask.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.12/416,501, filed on Apr. 1, 2009 and claims priority from and thebenefit of Korean Patent Application No. 10-2008-0061571, filed on Jun.27, 2008, all of which are hereby incorporated by reference for allpurposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic light emitting device, amanufacturing method thereof, and a shadow mask thereof.

2. Discussion of the Background

An organic light emitting device includes a plurality of pixels, andeach pixel includes an organic light emitting element and a plurality ofthin film transistors for driving them.

The organic light emitting element includes an anode, a cathode, and anorganic light emitting member disposed therebetween. The organic lightemitting member may emit light of three primary colors, for example,red, green, and blue. The materials that make up the organic lightemitting member may be different according to the colors emitted fromthe organic light emitting member, and because the different materialsare used, processes for manufacturing them may be additionally executed.As a result, the manufacturing process may be lengthened and the numberof manufacturing process may be increased.

Also, a predetermined distance as a process margin may be required dueto the masks used for forming the organic light emitting members of eachcolor such that the aperture ratio is reduced.

SUMMARY OF THE INVENTION

The present invention provides an organic light emitting device that hasan increased aperture ratio. The present invention also provides amethod of manufacturing an organic light emitting device that reducesthe number of manufacturing processes thereof, thereby reducing themanufacturing time and the manufacturing cost of the organic lightemitting device.

Additional features of the invention will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention.

The present invention discloses an organic light emitting device thatincludes: a red subpixel including a pixel electrode, a commonelectrode, and a red organic light emitting member; a green subpixelincluding a pixel electrode, a common electrode, and a green organiclight emitting member; and a blue subpixel including a pixel electrode,a common electrode, and a blue organic light emitting member, the bluesubpixel having a larger size than the red subpixel, and the bluesubpixel having a larger size than the green subpixel, wherein the redorganic light emitting member and the green organic light emittingmember have the same layered structure.

The present invention also discloses an organic light emitting deviceincluding: a red subpixel including a pixel electrode, a commonelectrode, and a red organic light emitting member; a green subpixelincluding a pixel electrode, a common electrode, and a green organiclight emitting member; and a blue subpixel including a pixel electrode,a common electrode, and a blue organic light emitting member, the bluesubpixel having a larger size than the red subpixel, and the bluesubpixel having a larger size than the green subpixel. The red organiclight emitting member and the green organic light emitting member havethe same layered structure. One red subpixel, one green subpixel, andone blue subpixel form a unit pixel. The unit pixel includes the redsubpixel and the green subpixel, which are alternately arrangedaccording to a first column, and the blue subpixel, which is arrangedaccording to a second column. A second unit pixel is symmetrical in leftand right directions.

The present invention also discloses a manufacturing method of anorganic light emitting device that includes forming a plurality of pixelelectrodes on a substrate, forming a red organic light emitting member,a green organic light emitting member, and a blue organic light emittingmember on the pixel electrode, and forming a common electrode on theorganic light emitting member, wherein the red organic light emittingmember and the green organic light emitting member are formed togetherwith the same process.

The present invention also discloses a shadow mask that includes a mainbody and at least two openings formed in the main body and having thesame shape, wherein a red emission layer, a green emission layer, and ablue emission layer are formed through the openings. The openings arearranged in row and column directions, and are arranged with a zigzagshape in one line in the column direction.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention, andtogether with the description serve to explain the principles of theinvention.

FIG. 1 is an equivalent circuit diagram of a unit subpixel in an organiclight emitting device according to an exemplary embodiment of thepresent invention.

FIG. 2 is a layout view of a unit subpixel of an organic light emittingdevice according to an exemplary embodiment of the present invention.

FIG. 3 is a cross-sectional view of the unit subpixel shown in FIG. 2taken along line III-III.

FIG. 4 is a schematic layout view of a unit pixel of an organic lightemitting device according to an exemplary embodiment of the presentinvention.

FIG. 5 is a cross-sectional view of an electrode and an organic lightemitting member of a red subpixel according to an exemplary embodimentof the present invention.

FIG. 6 is a cross-sectional view of an electrode and an organic lightemitting member of a green subpixel according to an exemplary embodimentof the present invention.

FIG. 7 and FIG. 8 are cross-sectional views of an electrode and anorganic light emitting member of a blue subpixel according to anexemplary embodiment of the present invention.

FIG. 9 is a cross-sectional view of an electrode and an organic lightemitting member of a red subpixel or a green subpixel according toanother exemplary embodiment of the present invention.

FIG. 10, FIG. 11, FIG. 12, and FIG. 13 are schematic layout views of aunit pixel of an organic light emitting device according to anotherexemplary embodiment of the present invention.

FIG. 14 is a schematic layout view of a unit pixel of an organic lightemitting device according to another exemplary embodiment of the presentinvention.

FIG. 15, FIG. 16, and FIG. 17 are views showing shadow masks for formingan emission layer of an organic light emitting member according to anexemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

The invention is described more fully hereinafter with reference to theaccompanying drawings, in which exemplary embodiments of the inventionare shown. This invention may, however, be embodied in many differentforms and should not be construed as limited to the exemplaryembodiments set forth herein. Rather, these exemplary embodiments areprovided so that this disclosure is thorough, and will fully convey thescope of the invention to those skilled in the art. In the drawings, thesize and relative sizes of layers and regions may be exaggerated forclarity. Like reference numerals in the drawings denote like elements.

It will be understood that when an element or layer is referred to asbeing “on” or “connected to” another element or layer, it can bedirectly on or directly connected to the other element or layer, orintervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on” or “directly connected to”another element or layer, there are no intervening elements or layerspresent.

An organic light emitting device according to an exemplary embodiment ofthe present invention will be described in detail with reference to FIG.1.

FIG. 1 is an equivalent circuit diagram of a unit subpixel in an organiclight emitting device according to an exemplary embodiment of thepresent invention.

Referring to FIG. 1, an organic light emitting device according to thepresent exemplary embodiment includes a plurality of signal lines 121,171, and 172, and a plurality of unit subpixels PX connected thereto.The unit subpixels PX are not shown in FIG. 1, however they are arrangedsubstantially in a matrix.

The signal lines include a plurality of gate lines 121 for transmittinggate signals (or scanning signals), a plurality of data lines 171 fortransmitting data signals, and a plurality of driving voltage lines 172for transmitting a driving voltage. The gate lines 121 extendsubstantially in a row direction and are substantially parallel to eachother, and the data lines 171 extend substantially in a column directionand are substantially parallel to each other. The driving voltage lines172 also extend substantially in a column direction and aresubstantially parallel to each other. Alternatively, the driving voltage172 may extend in the row direction, or they may be formed with a meshshape (i.e., extend in both the row direction and the column direction).

Each unit subpixel PX includes a switching transistor Qs, a drivingtransistor Qd, a storage capacitor Cst, and an organic light emittingelement LD.

The switching transistor Qs has a control terminal connected to one ofthe gate lines 121, an input terminal connected to one of the data lines171, and an output terminal connected to the driving transistor Qd. Theswitching transistor Qs transmits the data signals applied to the dataline 171 to the driving transistor Qd in response to a gate signalapplied to the gate line 121.

The driving transistor Qd has a control terminal connected to theswitching transistor Qs, an input terminal connected to the drivingvoltage line 172, and an output terminal connected to the organic lightemitting element LD. The driving transistor Qd drives an output currentI_(LD) having a magnitude depending on the voltage difference betweenthe control terminal and the input terminal thereof.

The capacitor Cst is connected between the control terminal and theinput terminal of the driving transistor Qd. The capacitor Cst stores adata signal applied to the control terminal of the driving transistor Qdand maintains the data signal after the switching transistor Qs turnsoff.

The organic light emitting element LD may be an organic light emittingdiode (OLED) that has an anode connected to the output terminal of thedriving transistor Qd and a cathode connected to a common voltage Vss.The organic light emitting element LD emits light having an intensitydepending on an output current I_(LD) of the driving transistor Qd,thereby displaying images.

The switching transistor Qs and the driving transistor Qd are shown asn-channel field effect transistors (FETs), however at least one of theswitching transistor Qs and the driving transistor Qd may be a p-channelFET. In addition, the connections among the transistors Qs and Qd, thecapacitor Cst, and the organic light emitting element LD may bemodified. For example, different transistors for compensating thethreshold voltage of the driving transistor Qd and the organic lightemitting element LD may be added in addition to the switching transistorQs and the driving transistor Qd.

The detailed structure of the organic light emitting device shown inFIG. 1 will be described below with reference to FIG. 2 and FIG. 3 aswell as FIG. 1.

FIG. 2 is a layout view of a unit subpixel of an organic light emittingdevice according to an exemplary embodiment of the present invention,and FIG. 3 is a cross-sectional view of the unit subpixel shown in FIG.2, taken along line III-III.

Referring to FIG. 2, FIG. 3, and FIG. 4, a plurality of gate lines 121including a plurality of first control electrodes 124 a and a pluralityof second control electrodes 124 b are formed on an insulating substrate110 made of a material such as transparent glass or plastic.

The gate lines 121 extend in the transverse direction, and the firstcontrol electrodes 124 a protrude upward. Each gate line 121 includes anend portion 129 having a large area for contact with another layer or anexternal driving circuit.

The second control electrodes 124 b are separated from the gate lines121 and include a plurality of storage electrodes 127 extending in alongitudinal direction.

A gate insulating layer 140, which may be made of silicon oxide orsilicon nitride, is formed on the gate lines 121 and the second controlelectrodes 124 b.

A plurality of first and second semiconductor islands 154 a and 154 b,which may be made of hydrogenated amorphous silicon, are formed on thegate insulating layer 140. The first semiconductor islands 154 a aredisposed on the first control electrodes 124 a and the secondsemiconductor islands 154 b are disposed on the second controlelectrodes 124 b.

A plurality of pairs of first ohmic contacts 163 a and 165 a are formedon the first semiconductor islands 154 a, and a plurality of pairs ofsecond ohmic contacts 163 b and 165 b are formed on the secondsemiconductor islands 154 b. The ohmic contacts 163 a, 163 b, 165 a, and165 b have an island shape, and may be made of a material such as n+hydrogenated amorphous silicon that is heavily doped with an n-typeimpurity such as phosphorus.

A plurality of data lines 171, a plurality of driving voltage lines 172,and a plurality of first and second output electrodes 175 a and 175 bare formed on the ohmic contacts 163 a, 163 b, 165 a, and 165 b, and onthe gate insulating layer 140.

The data lines 171 and the driving voltage lines 172 extend in thelongitudinal direction while crossing the gate lines 121. The data lines171 include first input electrodes 173 a extending toward the firstcontrol electrodes 124 a, and the driving voltage lines 172 includesecond input electrodes 173 b extending toward the second controlelectrodes 124 b.

The first and second output electrodes 175 a and 175 b are separatedfrom each other, as are the data lines 171 and the driving voltage lines172. The first input electrodes 173 a and the first output electrodes175 a are opposite to each other with respect to the first controlelectrodes 124 a, and the second input electrodes 173 b and the secondoutput electrodes 175 b are opposite to each other with respect to thesecond control electrodes 124 b.

The ohmic contacts 163 a, 163 b, 165 a, and 165 b are disposed betweenthe semiconductor islands 154 a and 154 b thereunder and the overlayingdata lines 171, the driving voltage lines 172, and the output electrodes175 a and 175 b. The semiconductor islands 154 a and 154 b include aportion between the input electrodes 173 a and 173 b and the outputelectrodes 175 a and 175 b that is exposed by them and serves as achannel region.

The first control electrode 124 a, the first input electrode 173 a, andthe first output electrode 175 a form a switching thin film transistor(TFT) Qs along with the first semiconductor island 154 a, and the secondcontrol electrode 124 b, the second input electrode 173 b, and thesecond output electrode 175 b form a driving thin film transistor Qdalong with the second semiconductor island 154 b.

The structures of the above-described switching thin film transistor Qs,the driving thin film transistor Qd, the gate line 121, the data line171, and the driving voltage line 172 are merely exemplary as they mayhave various structures.

A passivation layer 180 is formed on the data lines 171, the drivingvoltage lines 172, the output electrodes 175 a and 175 b, and theexposed semiconductor islands 154 a and 154 b. The passivation layer 180includes a lower layer 180 p that may be made of an inorganic insulatorsuch as silicon nitride or silicon oxide, and an upper layer 180 q thatmay be made of an organic insulator. The organic insulator may have adielectric constant of less than 4.0, and it may have photosensitivityand a flat surface. Alternatively, the passivation layer 180 may have asingle-layered structure as an inorganic insulator, or as an organicinsulator.

The passivation layer 180 has a plurality of contact holes 182 exposingend portions 179 of the data lines 171, and a plurality of contact holes185 a and 185 b exposing the output electrodes 175 a and 175 b. Thepassivation layer 180 and the gate insulating layer 140 have a pluralityof contact holes 181 exposing the end portions 129 of the gate lines121, and a plurality of contact holes 184 exposing the second controlelectrodes 124 b.

A plurality of reflecting electrodes 192 are formed on the passivationlayer 180. The reflecting electrodes 192 are made of a metal such asmagnesium (Mg), aluminum (Al), silver (Ag), or a reflective materialincluding an alloy thereof (for example, a magnesium/silver alloy).

A plurality of pixel electrodes 191, and a plurality of connectingmembers 85 and contact assistants 81 and 82, are respectively formed onthe reflecting electrode 192 and the passivation layer 180. The pixelelectrodes 191, the connecting members 85, and the contact assistants 81and 82 may be made of a transparent conductive material such as ITO orIZO.

The pixel electrodes 191 are connected to the second output electrodes175 b through the contact holes 185 b, and the connecting members 85 areconnected to the second control electrodes 124 b and the first outputelectrodes 175 a through the contact holes 184 and 185 a, respectively.

The contact assistants 81 and 82 are respectively connected to the endportions 129 and 179 of the gate and data lines 121 and 171 through thecontact holes 181 and 182. The contact assistants 81 and 82 respectivelyenhance adhesion between the end portions 129 and 179 of the gate lines121 and the data lines 171 and external devices, and protect them.

Partitions 361 are formed on the passivation layer 180. The partitions361 define a plurality of openings 365 enclosing edges of the pixelelectrodes 191 like a bank, and are made of an organic insulator or aninorganic insulator. Each partition 361 may be made of a photosensitivematerial including a black pigment, and because the partition 361functions as a light blocking member, the manufacturing process may besimplified.

A plurality of organic light emitting members 370 are formed in theopenings 365 defined by the partitions 361 on the pixel electrodes 191.

The organic light emitting members 370 may be made of a multi-layeredstructure in which a hole injection layer 371, a hole transport layer372, an emission layer 373, an electron transport layer 374, and anelectron injection layer 375 are sequentially deposited (see FIG. 5).The emission layer 373 is preferably made of an organic materialuniquely emitting light of one primary color such as red, green, orblue, and the remaining layers except for the emission layer 373 enhancethe light emitting efficiency of the emission layer 373. The emissionlayer 373 may have various layered structures for each color, and willbe described below.

A common electrode 270 is formed on the organic light emitting member370 and the partition 361 on the whole surface of the substrate. Thecommon electrode 270 may be made of a reflective metal such as silver(Ag), magnesium (Mg), aluminum (Al), or an alloy thereof (for example, amagnesium/silver alloy), and the thickness thereof may be in the rangeof about 50 Å-200 Å. If the metal used in the common electrode 270 has athickness in this range, the metal may have a translucent characteristicin which incident light is both reflected and transmitted.

In the organic light emitting device, the pixel electrode 191, theorganic light emitting member 370, and the common electrode 270 form anorganic light emitting element LD.

The organic light emitting device according to an exemplary embodimentof the present invention emits light toward the upper side of thesubstrate 110 to display images. The light emitted from the organiclight emitting member 370 to the common electrode 270 is reflected bythe common electrode 270, guided toward the pixel electrode 191, passesthrough the pixel electrode 191, and arrives at the reflecting electrode192. The reflecting electrode 192 again reflects the incident lighttoward the common electrode 270, and the common electrode 270 reflectsthe light to emit the light to the reflecting electrode 192. In thisway, the light reciprocating between the reflecting electrode 192 andthe common electrode 270 is subjected to an optical process such asinterference until it passes through the common electrode 270 to theoutside if appropriate conditions are imposed. If the distance betweenthe common electrode 270 and the reflecting electrode 192, that is, thetotal thickness of the pixel electrode 191 and the organic lightemitting member 370, has the value of an integer multiple of theparticular wavelength of emitted light, the light of the particularwavelength is emitted outside. Therefore, the total thickness of thepixel electrode 191 and the organic light emitting member 370 may becontrolled to thereby control the wavelength of the emitted light. Thisis called a micro-cavity characteristic.

By using the micro-cavity characteristic, even though the red subpixeland the green subpixel have the same layered structure in the presentinvention, light having different wavelengths may be emitted.

In the organic light emitting device according to an exemplaryembodiment of the present invention, the cross-sectional structure ofeach color subpixel will now be described. The differences between thesubpixels of each color will be specifically described below.

FIG. 4 is a schematic layout view of a unit pixel of an organic lightemitting device according to an exemplary embodiment of the presentinvention, FIG. 5 is a cross-sectional view of an electrode and anorganic light emitting member of a red subpixel according to anexemplary embodiment of the present invention, FIG. 6 is across-sectional view of an electrode and an organic light emittingmember of a green subpixel according to an exemplary embodiment of thepresent invention, and FIG. 7 and FIG. 8 are cross-sectional views of anelectrode and an organic light emitting member of a blue subpixelaccording to an exemplary embodiment of the present invention.

FIG. 4 shows the arrangement of the unit pixel P in the organic lightemitting device according to an exemplary embodiment of the presentinvention. Each subpixel is schematically shown in FIG. 4, wherein Rindicates a red subpixel, G indicates a green subpixel, B indicates ablue subpixel, and O indicates an opening of a shadow mask. Hereafter,R, G, B, and O all indicate the same elements in subsequent figures.

The red subpixel R and the green subpixel G have the same size, and formthe left column of the unit pixel P. The blue subpixel B forms the rightcolumn of the unit pixel P. The blue subpixel B may have the same widthas the red subpixel R and the green subpixel G, and its length may be1.5 to 2 times its width.

The size of the red subpixel R together with the green subpixel G, andthe blue subpixel B, are different. However, they all include the unitstructure as shown in FIG. 1, FIG. 2, and FIG. 3. Also, the bluesubpixel B according to an exemplary embodiment of the present inventionmay have a structure in which two subpixels having the same size as thered subpixel R or the green subpixel G are connected to each other.

The cross-section of the electrode and the organic light emitting memberin each subpixel will be described with reference to FIG. 5, FIG. 6,FIG. 7, and FIG. 8.

FIG. 5 represents the cross-sectional view of the electrode and theorganic light emitting member in the red subpixel R. A reflectingelectrode 192, a pixel electrode 191, a hole injection layer 371, a holetransport layer 372, a red emission layer 373R, a green emission layer373G, an electron transport layer 374, an electron injection layer 375,and a common electrode 270 are sequentially deposited. The holeinjection layer 371, the hole transport layer 372, the red emissionlayer 373R, the green emission layer 373G, the electron transport layer374, and the electron injection layer 375 form a red organic lightemitting member 370R.

In the green subpixel G shown in FIG. 6, a reflecting electrode 192, apixel electrode 191, a hole injection layer 371, a hole transport layer372, a red emission layer 373R, a green emission layer 373G, an electrontransport layer 374, an electron injection layer 375, and a commonelectrode 270 are sequentially deposited. Here, the hole injection layer371, the hole transport layer 372, the red emission layer 373R, thegreen emission layer 373G, the electron transport layer 374, and theelectron injection layer 375 form a green organic light emitting member370G.

FIG. 5 and FIG. 6 have the same layered structure, however thethicknesses of the pixel electrodes 191 are different. That is, thepixel electrode 191 has the thickness “a” in the red subpixel R, and thepixel electrode 191 has the thickness “b” that is less than thethickness “a” in the green subpixel G.

Considering the micro-cavity characteristic, the thickness “a” of thepixel electrode 191 is controlled in the red subpixel R such that thelight having a red wavelength is reflected between the reflectingelectrode 192 and the common electrode 270 and is emitted outside. Thethickness “b” of the pixel electrode 191 is controlled in the greensubpixel G such that the light having a green wavelength is emitted.That is, the sum of the thicknesses of pixel electrode 191 and the redorganic light emitting member 370R equals the integer multiple of thelight having the red wavelength in the red subpixel R. Also, the sum ofthe thicknesses of the pixel electrode 191 and the green organic lightemitting member 370G equals the integer multiple of the light having thegreen wavelength in the green subpixel G.

The red subpixel R and the green subpixel G have the same layeredstructure and the same thickness except for the thickness of the pixelelectrode 191. Therefore, if the pixel electrode 191 is separatelyformed in the red subpixel R and the green subpixel G, the remainingstructures may be simultaneously formed. Particularly, the emissionlayer 373 may be formed together by using the opening O of one shadowmask. As a result, the red emission layer 373R and the green emissionlayer 373G are present in the portion between the red subpixel R and thegreen subpixel G that are formed by the same opening O. The partition361 only exists in this portion, and the pixel electrode 191 is notformed in the portion between the red subpixel R and the green subpixelG. Therefore the current does not flow in this portion of the unit pixelP, and as a result light is not emitted.

Also, when forming each emission layer 373 using a different shadowmask, a predetermined interval may be required due to a shadow effect(if the interval between the openings O of each shadow mask is narrow,the emission layers may be formed with a different shape from theopening O) between the red subpixel and the green subpixel, however thethickness of the partition 361 may be minimized, thereby improving theaperture ratio in the present invention in which the emission layer 373is formed by using the same shadow mask.

Referring to FIG. 7 and FIG. 8, the blue subpixel B may be separatelyformed, and FIG. 7 and FIG. 8 show different exemplary embodiments ofthe blue subpixel.

FIG. 7 and FIG. 8 show the cross-section of the electrode and theorganic light emitting member in the blue subpixel B. A reflectingelectrode 192, a pixel electrode 191, a hole injection layer 371, a holetransport layer 372, a blue emission layer 373B, an electron transportlayer 374, an electron injection layer 375, and a common electrode 270are sequentially deposited in the blue subpixel B. The hole injectionlayer 371, the hole transport layer 372, the blue emission layer 373B,the electron transport layer 374, and the electron injection layer 375form a blue organic light emitting member 370B.

As respectively shown in FIG. 7 and FIG. 8, the pixel electrode 191 ofthe blue subpixel B has the thickness “b” of the pixel electrode of thegreen subpixel G and the thickness “a” of the pixel electrode of the redsubpixel R. That is, the pixel electrode 191 of the blue subpixel B maybe formed together with a pixel electrode 191 of the red subpixel R orthe green subpixel G.

The sum of the thickness of the pixel electrode 191 and the blue organiclight emitting member 370B may be an integer multiple of the wavelengthof the blue light in the blue subpixel B according to the characteristicof the micro-cavity. However, the thickness of the pixel electrode 191of the blue subpixel B may be the same as that of the red subpixel R orthe green subpixel G such that that the thickness of the blue emissionlayer 373B may be controlled to emit light of a blue wavelength. Bycontrolling the thickness of the blue emission layer 373B, the commonlayers between the red, green, and blue subpixels R, G, and B may beformed together.

There are many conditions for satisfying the characteristics of themicro-cavity such that the thickness of the blue emission layer 373B maybe greater or less than the thickness of the red emission layer 373R andthe green emission layer 373G. That is, FIG. 7 shows the thickness “c”of the blue emission layer 373B as thinner than the thickness of the redemission layer 373R and the green emission layer 373G. FIG. 8 shows thethickness “d” of the blue emission layer 373B as thicker than thethickness of the red emission layer 373R and the green emission layer373G.

Alternatively, the pixel electrode 191 of the blue subpixel B and thelayers of the blue emission layer 373B may have a different thicknessfrom that of the layers of the red subpixel R or the green subpixel G.FIG. 9 is a cross-sectional view of an electrode and an organic lightemitting member of a red subpixel or a green subpixel according toanother exemplary embodiment of the present invention.

FIG. 9 shows another layered structure of the organic light emittingmember 370 of a red subpixel R or a green subpixel G. That is, aninterlayer 377 is formed between the red emission layer 373R and thegreen emission layer 373G such that the interference between the redemission layer 373R and the green emission layer 373G may be prevented,thereby improving the display characteristics. The interlayer 377 may beformed of the same material as the hole transport layer 372 or theelectron transport layer 374.

The thickness between the reflecting electrode 192 and the commonelectrode 270 may satisfy the condition of the micro-cavity, to emitlight of a red or a green wavelength. FIG. 10 to FIG. 13 are schematiclayout views of a unit pixel of an organic light emitting deviceaccording to another exemplary embodiment of the present invention.

FIG. 10, FIG. 11, FIG. 12, and FIG. 13 show alternative structures(particularly, the size of the opening O) from the structure of theopening O of the shadow mask to form the emission layer 373 as shown inFIG. 4.

FIG. 10 has the same arrangement as the unit pixel shown in FIG. 4. Inthe exemplary embodiment shown in FIG. 4, the red emission layer 373Rand the green emission layer 373G are formed together by using the oneopening O of a shadow mask when forming the red subpixel R and the greensubpixel G in one unit pixel. However, the red emission layer 373R andthe green emission layer 373G are deposited in two unit pixels in FIG.10. That is, the red emission layer 373R and the green emission layer373G are deposited two by two for a total of four subpixels (two redsubpixels R and two green subpixels G) in the upper and lower pixels P₁₁and P₂₁, respectively, in FIG. 10. In the case of the blue subpixel B ofFIG. 4, one blue emission layer 373B is formed by one opening O of theshadow mask. However in FIG. 10, blue emission layers 373B of two bluesubpixels B are formed by one opening O of the shadow mask. In FIG. 10,the opening O of the shadow mask used for forming the red emission layer373R and the green emission layer 373G is the same as the opening O ofthe shadow mask for forming the blue emission layer 373B.

In the exemplary embodiment shown in FIG. 11, the red emission layer373R and the green emission layer 373G in the unit pixel are depositedthrough the one opening O of a shadow mask, as in FIG. 4. However, inFIG. 11, the structure of the unit pixel of FIG. 4 and the right andleft symmetrical structures thereof (i.e., the blue subpixel B isdisposed in the left side, and the red subpixel R and the green subpixelG are disposed in the right side; hereafter, referred to as “a unitpixel of right and left symmetry”) are arranged together. That is, theunit pixels of FIG. 4 are arranged in one row, the unit pixels of rightand left symmetry are arranged in the next row, and the unit pixels arechanged every row. The blue emission layer 373B is formed on the unitpixel by one opening O of the shadow mask as in FIG. 4, which is thesame opening O of the shadow mask for forming the red emission layer373R and the green emission layer 373G.

The exemplary embodiment shown in FIG. 12 has a structure in which theunit pixel of the exemplary embodiment shown in FIG. 11 is changed bytwo rows as a unit. Also, an emission layer 373 is formed on two unitpixels that are close to each other in the upper and lower sides. Thatis, the red emission layer 373R and the green emission layer 373G in thepixel P₁₁ and the pixel P₂₁ are formed by one opening O of a shadowmask, and the blue emission layer 373B in the pixel P₂₁ and the pixelP₂₁ is formed by one opening O of the shadow mask. The opening O of theshadow mask for forming the blue emission layer 373B is the same openingO of the shadow mask for forming the red emission layer 373R and thegreen emission layer 373G.

Considering the shadow effects, the exemplary embodiment shown in FIG.12 includes a smaller region where the shadow effect may occur ascompared with the exemplary embodiment shown in FIG. 11. That is, theshadow effect may occur between the pixel P₁₁ and the pixel P₂₁ in FIG.11 such that the interval between the pixels must be relatively far,however in FIG. 12, the pixel P₁₁ and the pixel P₂₁ are formed by oneopening O of the shadow mask such that the maximum wide region may beused without considering the shadow effect, thereby improving theaperture ratio.

In FIG. 13, the unit pixel and the unit pixel of right and left symmetryare alternately arranged by two in the row direction, and arealternately arranged by one in the column direction. In the exemplaryembodiment shown in FIG. 13, the emission layers 373 of a total of fourneighboring unit pixels of the upper, lower, left, and right sides areformed together. That is, the red emission layer 373R and the greenemission layer 373G of the pixel P₁₂, the pixel P₁₃, the pixel P₂₂, andthe pixel P₂₃ are formed by one opening O of a shadow mask. Also, theblue emission layer 373B of the pixel P11, the pixel P12, the pixel P21,and the pixel P22 are formed together. The opening O of the shadow maskfor forming the blue emission layer 373B is the same opening O of theshadow mask for forming the red emission layer 373R and the greenemission layer 373G.

The exemplary embodiment shown in FIG. 13 includes the smaller regionwhere the shadow effect is considered compared with the exemplaryembodiment shown in FIG. 12, such that the aperture ratio may beimproved.

FIG. 14 is a layout view of unit pixels in an organic light emittingdevice according to another exemplary embodiment of the presentinvention.

The exemplary embodiment shown in FIG. 14 includes the same arrangementof pixels as that shown in FIG. 10. However, a plurality of auxiliaryelectrodes 243 is included in FIG. 14. The auxiliary electrode 243 is anelectrode for applying a predetermined voltage to the common electrode270, and may be formed with the same layer as the gate line or the dataline, or with an additional layer. The auxiliary electrodes 243 aredisposed between the neighboring subpixels, however they are notdisposed between the subpixels that are formed by the same opening O ofthe shadow mask. Rather, they are disposed between the subpixels thatare formed using different openings O of the different shadow mask. Inthis way, the auxiliary electrodes 243 are formed in the region wherethe shadow effect is considered such that the reduction of the apertureratio due to the auxiliary electrode 243 may be prevented.

FIG. 15, FIG. 16, and FIG. 17 are views showing shadow masks for formingan emission layer of an organic light emitting member according to anexemplary embodiment of the present invention.

The opening O of the shadow mask is shown in FIG. 4, FIG. 10, FIG. 11,FIG. 12, FIG. 13, and FIG. 14, however a shadow mask for forming theemission layer will be described below.

A shadow mask 500 according to an exemplary embodiment of the presentinvention includes opening O having the same size and arranged in therow and column directions, and the openings O are arranged in the columndirection in the exemplary embodiment shown in FIG. 15 and FIG. 16.However the openings O are arranged in the column direction with azigzag shape in the exemplary embodiment shown in FIG. 17.

The shadow mask 500 according to an exemplary embodiment of the presentinvention has a merit that the red, green, and blue emission layers373R, 373G, and 373B, respectively, may be formed through the openingsO.

The exemplary embodiments shown in FIG. 4, FIG. 10, and FIG. 14 may usethe shadow mask shown in FIG. 15 or FIG. 16. The size of the opening Ochanges according to the exemplary embodiment. The shadow mask of FIG.16 is advantageous to improve the aperture ratio compared with theshadow mask of FIG. 15. In FIG. 16, the distance between the upper andlower two openings O may be limited to more than a predetermineddistance. This may prevent a change of the exposure pattern due to theshadow effect. However, the distance between the openings O of theshadow mask is sufficient in FIG. 16 such that there may be a distancelimit between the pixels or the subpixels, thereby improving theaperture ratio.

The exemplary embodiments shown in FIG. 11, FIG. 12, and FIG. 13 may usethe shadow mask shown in FIG. 17.

The shadow mask shown in FIG. 15, FIG. 16, and FIG. 17 is used whenforming the red emission layer 373R and the green emission layer 373Gtogether, and also forming the blue emission layer 373B. Also, the sizeof the opening O changes according to the exemplary embodiment.

The present invention may be applied to an organic light emitting devicehaving a different structure from the structure shown in FIG. 2 and FIG.3. That is, a translucent electrode may be formed under the pixelelectrode 191, and the common electrode 270 may be formed as areflecting electrode to emit the light toward the lower side.

It will be apparent to those skilled in the art that variousmodifications and variation can be made in the present invention withoutdeparting from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

What is claimed is:
 1. A method for manufacturing an organic lightemitting device, comprising: forming a plurality of pixel electrodes ona substrate; forming a red organic light emitting member, a greenorganic light emitting member, and a blue organic light emitting memberon the pixel electrodes, and forming a common electrode on the organiclight emitting members, wherein the red organic light emitting memberand the green organic light emitting member are formed simultaneouslywith a same layered structure and a same thickness during the sameprocess.
 2. The method of claim 1, wherein the forming of the emissionlayer comprising the red emission layer and the green emission layercomprises forming the red emission layer through a first opening of ashadow mask, and forming the green emission layer through the firstopening of the shadow mask.
 3. The method of claim 2, wherein theforming of the blue organic light emitting member comprises forming ablue emission layer, and the blue emission layer is formed through thefirst opening of the shadow mask.
 4. The method of claim 1, wherein theforming of the emission layer comprising the red emission layer and thegreen emission layer further comprises forming a middle layer betweenthe red emission layer and the green emission layer.
 5. The method ofclaim 1, wherein in the forming of the pixel electrodes on thesubstrate, the thickness of the pixel electrode formed under the redorganic light emitting member and the thickness of the pixel electrodeformed under the green organic light emitting member are different fromeach other.
 6. The method of claim 5, wherein in the forming of thepixel electrodes on the substrate, the pixel electrode under the blueorganic light emitting member is formed with the same thickness as thepixel electrode under the red organic light emitting member or the greenorganic light emitting member.